MICROSEMI二極管1N5711UR-1產(chǎn)品參數(shù)
Specifications | ||
TYPE NUMBER | 1N5711UR-1 | |
MINIMUM BREAKDOWN VOLTAGE | V(BR) @ 10 μA/Volts | 70 |
MAXIMUM FORWARD VOLTAGE | VF @ 1 mA/Volts | 0.41 |
MAXIMUM FORWARD VOLTAGE | VF @ IF/V @ mA | 1.0 @ 15 |
WORKING PEAK REVERSE VOLTAGE | VRWM/V (pk) | 50 |
MAXIMUM REVERSE LEAKAGE CURRENT | IR @ V R nA/Volts | 200/50 |
MAXIMUM CAPACITANCE @ V R = 0 VOLTS f = 1.0 MHz | CT/pF | 2 |
MICROSEMI二極管1N5711UR-1產(chǎn)品介紹
肖特基勢(shì)壘二極管采用冶金結(jié)合,可為高可靠性應(yīng)用提供軍用級(jí)認(rèn)證。該小二極管被密封并粘合到DO-213AA玻璃封裝中。
This Schottky barrier diode is metallurgically bonded and offers military grade qualifications for high-reliability applications. This small diode is hermetically sealed and bonded into a DO-213AA glass package.
MICROSEMI二極管1N5711UR-1其他常見(jiàn)型號(hào):
MICROSEMI 1N5711UR-1
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MICROSEMI CDLL6263
MICROSEMI CDLL6857
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MICROSEMI Diode and Rectifier Devices NEW + ORIGINAL+ ONE YEAR WARRANTY
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MICROSEMI二極管1N5711UR-1產(chǎn)品參數(shù)