半導(dǎo)體制造前端工藝及氣體檢測(cè)儀的應(yīng)用
半導(dǎo)體制造（前端工藝）現(xiàn)場(chǎng)
半導(dǎo)體制造過(guò)程中使用了多種氣體。介紹主要用于各工序氣體檢測(cè)的氣體檢測(cè)儀，并附有相應(yīng)制造工序的圖解。
Semiconductor manufacturing（Front-end process）sites
A wide range of gases are used in semiconductor manufacturing processes. Describes the gas detectors mainly used for detection of gases in each process, accompanied by illustrations of the corresponding manufacturing processes.
半導(dǎo)體制造工廠前端工序①
Semiconductor manufacturing plant Front-end process ①
半導(dǎo)體制造工廠前端工序②
Semiconductor manufacturing plant Front-end process ②
多晶硅制造
生產(chǎn)多晶硅包括將金屬硅溶解在鹽酸 (HCI) 中并精制三氯硅烷 (SiHCI3 ) 以提高純度。
然后使SiHCI3在反應(yīng)容器(鐘罩)中與超純氫(H2 )反應(yīng)以沉淀和生長(zhǎng)圓柱形多晶硅。
Polycrystalline Si manufacture
Producing polycrystalline silicon involves dissolving metallic silicon in hydrochloric acid (HCI) and refining trichlorosilane (SiHCI3)to increase the purity.
The SiHCI3 is then allowed to react with ultra-pure hydrogen (H2) in a reaction vessel (bell jar) to precipitate and grow cylindrical polycrystalline silicon.
危害
需要采取預(yù)防措施以防止氣體泄漏。原料氣體和副產(chǎn)物氣體含有氫氣(H2 )形式的可燃?xì)怏w和有毒氣體如三氯氫硅(SiHCI3 )和氯化氫(HCI)。
Hazards
Precautions are required to prevent gas leaks. The raw material gas and byproduct gas contains combustible gas in the form of hydrogen (H2) and toxic gases such as trichlorosilane (SiHCI3) and hydrogen chloride (HCI).
單晶硅錠制造
單晶硅錠的制造工藝大致分為直拉（CZ）工藝和浮區(qū)（FZ）工藝。
這兩種工藝都涉及通過(guò)在氬氣中生長(zhǎng)單晶來(lái)制造單晶硅錠。
Monocrystalline Si ingot manufacture
Monocrystalline Si ingot manufacturing processes are broadly divided into the Czochralski (CZ) process and the Floating Zone (FZ) process.
Both processes involve manufacturing monocrystalline silicon ingots by growing monocrystals in argon gas.
危害
需要注意工作環(huán)境中的氧氣濃度，因?yàn)橹圃爝^(guò)程中使用的氬氣 (Ar) 是一種會(huì)令人窒息的氣體。
Hazards
Precautions are required for oxygen concentrations in the work environment, as argon (Ar) used in the manufacturing process is a suffocating gas.
氧化硅膜
氧化硅膜的形成工藝包括熱氧化工藝、干式O 2氧化工藝、濕式O 2氧化工藝、熱解氧化工藝（包括在外部燃燒氫氣和氧氣并以水蒸氣的形式供應(yīng)）和鹽酸酸氧化過(guò)程（包括將氯化氫 (HCl) 氣體添加到 N2和 O2氣體中）。
Silicon oxide film
Silicon oxide film formation processes include the thermal oxidation process, dry O2 oxidation process, wet O2 oxidation process, the pyrogenic oxidation process (which involves combusting H2 gas and O2 gas externally and supplying this as water vapor),
and the hydrochloric acid oxidation process (which involves adding hydrogen chloride (HCl) gas to N2 and O2 gas).
危害
如果使用氫氣 (H2 ) 或氯化氫 (HCI)，則需要采取預(yù)防措施以防止氣體泄漏。
Hazards
Precautions are required to prevent gas leaks if hydrogen (H2) or hydrogen chloride (HCI) are used.
氮化硅薄膜
通過(guò)在高溫下使硅烷(SiH4 )和氨氣(NH3 )發(fā)生化學(xué)反應(yīng)，在氧化硅膜的頂部沉積氮化硅膜。
Silicon nitride film
A silicon nitride film is deposited on top of the silicon oxide film by chemically reacting silane (SiH4) and ammonia (NH3) gas at high temperature.
危害
由于硅烷 (SiH4 ) 和氨 (NH3 ) 都是有毒氣體，因此需要采取預(yù)防措施來(lái)防止即使是很小的泄漏。
Hazards
Precautions are required to prevent even small leaks, as both silane (SiH4) and ammonia (NH3) are toxic gases.
光刻
光刻包括用光刻膠涂覆硅晶片的表面，并使用曝光機(jī)通過(guò)光掩模進(jìn)行曝光，以從光掩模上轉(zhuǎn)移電路圖案。
使用去除劑從暴露的晶片上去除殘留的抗蝕劑區(qū)域。
Lithography
Lithography involves coating the surface of a silicon wafer with photoresist and exposure via a photomask using an exposure machine to transfer the circuit pattern from the photomask.
The residual areas of resist are removed from the exposed wafer using a remover.
危害
由于 KrF 和 ArF 中使用的氟 (F2) 氣體是有毒氣體，因此需要采取預(yù)防措施以防止即使是很小的泄漏。
Hazards
Precautions are required to prevent even small leaks, as the fluorine (F2) gas used in KrF and ArF is a toxic gas.
化學(xué)氣相沉積（CVD）
CVD（化學(xué)氣相沉積）技術(shù)涉及通過(guò)使原料氣體（薄膜生成氣體）在反應(yīng)室中發(fā)生化學(xué)反應(yīng)，在晶片上沉積新薄膜。
CVD
The CVD (Chemical Vapor Deposition) technique involves depositing a new film on a wafer by allowing the raw material gas (film generating gas) to chemically react in a reaction chamber.
危害
由于硅烷 (SiH4 ) 和 TEOS等原料氣體是有毒氣體，因此即使是很小的泄漏也需要采取預(yù)防措施。
Hazards
Precautions are required to prevent even small leaks, as raw material gases such as silane (SiH4) and TEOS are toxic gases.
PVD
PVD（物理氣相沉積）技術(shù)通過(guò)促進(jìn)等離子體中產(chǎn)生的氬 (Ar) 離子與真空室內(nèi)的目標(biāo)碰撞并將噴射的目標(biāo)原子沉積在晶片上來(lái)形成薄膜。
PVD
The PVD (Physical Vapor Deposition) technique forms a film by promoting the collision of argon (Ar) ions generated in a plasma against a target inside a vacuum chamber and depositing the ejected target atoms on a wafer.
危害
需要注意工作環(huán)境中的氧氣濃度，因?yàn)橹圃爝^(guò)程中使用的氬氣 (Ar) 是一種令人窒息的氣體。
Hazards
Caution is required with the oxygen concentration in the work environment, as the argon (Ar) used in the manufacturing process is a suffocating gas.
外延
外延技術(shù)在單晶襯底上形成新晶體。
根據(jù)所制造的基材，使用的氣體范圍很廣。
Epitaxial
The epitaxial technique forms new crystals on a monocrystal substrate.
A wide range of gases are used, depending on the substrate being manufactured.
危害
需要采取預(yù)防措施以防止諸如硅烷（SiH4）和氫氣（H2）等氣體的泄漏。
Hazards
Precautions are required to prevent leaks of gases such as silane (SiH4) and hydrogen (H2).
雜質(zhì)擴(kuò)散
這是一種有意將微量雜質(zhì)添加到晶片中以確保有效的半導(dǎo)體功能的技術(shù)。
這也稱為摻雜，摻雜時(shí)使用的氣體稱為摻雜氣體。
Impurity diffusion
This is a technique for intentionally adding trace amounts of impurities to a wafer to ensure efficient semiconductor function.
This is also called doping, and the gas used in doping is called the doping gas.
危害
需要采取預(yù)防措施以防止三氟化氯 (CIF3 ) 和乙硼烷 (B2 H6 ) 等氣體的泄漏。
Hazards
Precautions are required to prevent leaks of gases such as chlorine trifluoride (CIF3) and diborane (B2H6).
離子注入法（注入）
該技術(shù)用于通過(guò)電離雜質(zhì)原子并將它們置于足以驅(qū)動(dòng)它們進(jìn)入硅晶體的加速度來(lái)將雜質(zhì)注入晶片。
Ion injection method (implanting)
This technique is used to inject impurities into a wafer by ionizing atoms of the impurity and subjecting them to acceleration sufficient to drive them into silicon crystals.
危害
需要采取預(yù)防措施以防止諸如磷化氫 (PH3 ) 和乙硼烷 (B2 H6 ) 等氣體的泄漏。
Hazards
Precautions are required to prevent leaks of gases such as phosphine (PH3) and diborane (B2H6).
蝕刻
蝕刻是一種利用化學(xué)品或氣體的腐蝕作用在半導(dǎo)體上形成電路的技術(shù)。
蝕刻工藝有兩種類型：干法和濕法。
Etching
Etching is a technique for forming circuits on semiconductors using the corrosive action of chemicals or gases.
There are two types of etching processes: dry and wet.
危害
需要采取預(yù)防措施以防止氣體和溶液泄漏。
干法蝕刻使用的典型氣體：CF4、CHF3、CI2、HBr、r、SF6、BCI3等
濕法蝕刻使用的典型溶液：氟化氫（HF）、氟化氫+氟化銨（NH4 F )、熱磷酸(H3 PO4 )、氟化氫+硝酸(HNO3 )+含碘冰醋酸(CH3 COOH + I2 )等。
Hazards
Precautions are required to prevent leaks of gases and solutions.
Typical gases used in dry etching: CF4, CHF3, CI2, HBr,r, SF6, BCI3, etc.
Typical solutions used in wet etching: hydrogen fluoride (HF), hydrogen fluoride + ammonium fluoride (NH4F), hot phosphoric acid (H3PO4), hydrogen fluoride + nitric acid (HNO3) + glacial acetic acid containing iodine (CH3COOH + I2), etc.
CMP，洗滌，灰化
CMP（化學(xué)機(jī)械拋光）是一種拋光技術(shù)，用于平滑晶片表面的光潔度。
CMP后需要洗滌，根據(jù)洗滌要求使用各種溶液和方法。
CMP,washing,ashing
CMP (Chemical Mechanical Polishing) is a polishing technique for smoothing the finish of a wafer surface.
Washing is necessary following CMP, and various solutions and methods are used depending on the washing requirements.
危害
需要采取預(yù)防措施以防止過(guò)程中使用的氣體和溶液泄漏。
Hazards
Precautions are required to prevent leaks of gases and solutions used in the process.
氣體檢測(cè)儀的應(yīng)用
Gas detectors are used in applications
建議將固定式氣體檢測(cè)儀用于以下應(yīng)用：
?用于檢查工人在場(chǎng)的工作環(huán)境的安全性
?用于檢測(cè)制造工廠和設(shè)備的泄漏
Fixed gas detectors are recommended for the following applications:
? For checking the safety of work environments in which workers are present
? For detecting leaks from manufacturing plants and equipment
建議將便攜式氣體檢測(cè)儀用于以下應(yīng)用：
?為了加強(qiáng)對(duì)工人的安全措施
? 從維護(hù)檢查作業(yè)前的殘留氣體確認(rèn)到作業(yè)時(shí)的安全性確認(rèn)、管接頭的密封狀況確認(rèn)等客觀數(shù)據(jù)進(jìn)行安全管理
? 用于確定發(fā)生氣體泄漏的位置
Portable gas detectors are recommended for the following applications:
? For strengthening safety measures for workers
? For managing safety using objective figures from checking for residual gas before maintenance and inspection work to confirming safety during work and checking sealing conditions on pipe unions
? For identifying the locations of gas leaks if they occur
本文英文原文轉(zhuǎn)載自：RIKEN KEIKI CO., LTD. https://product.rikenkeiki.co.jp/
本文翻譯by愛(ài)澤工業(yè)，如有偏頗，敬請(qǐng)指正。
